Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.
Phys Rev Lett
; 104(13): 137201, 2010 Apr 02.
Article
in En
| MEDLINE
| ID: mdl-20481907
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2010
Document type:
Article
Affiliation country:
Singapore
Country of publication:
United States