Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.
Nano Lett
; 10(8): 3052-6, 2010 Aug 11.
Article
in En
| MEDLINE
| ID: mdl-20698619
ABSTRACT
We report the growth of InAs(1-x)Sb(x) self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs(1-x)Sb(x) QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent k x p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs(1-x)Sb(x)/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nano Lett
Year:
2010
Document type:
Article
Affiliation country:
United States