Photoluminescence imaging of focused ion beam induced individual quantum dots.

We report on scanning microphotoluminescence measurements that spectrally and spatially resolve emission from individual InAs quantum dots that were induced by focused ion beam patterning. Multilayers of quantum dots were spaced 2 µm apart, with a minimum single dot emission line width of 160 µeV, indicating good optical quality for dots patterned using this technique. Mapping 16 array sites, at least 65% were occupied by optically active dots and the spectral inhomogeneity was within 30 meV.