Electron spin resonance observation of an interfacial Ge P(b 1)-type defect in SiO(2)/(100)Si(1-x)Ge(x)/SiO(2)/Si heterostructures.
J Phys Condens Matter
; 21(12): 122201, 2009 Mar 25.
Article
in En
| MEDLINE
| ID: mdl-21817441
ABSTRACT
Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO(2)/(100)Ge(x)Si(1-x)/SiO(2)/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C(2v)) symmetry with principal g values g(1) = 2.0338 ± 0.0003, g(2) = 2.0386 ± 0.0006, g(3) = 2.0054 is observed in maximum densities of â¼6.8 × 10(12) cm(-2) of the Ge(x)Si(1-x)/SiO(2) interface for xâ¼0.7, the signal disappearing for x outside the 0.45-0.93 range. The notable absence of interfering Si P(b)-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge P(b 1)-type center, i.e. not a trigonal basic Ge P(b(0))-type center ([Formula see text]). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
J Phys Condens Matter
Journal subject:
BIOFISICA
Year:
2009
Document type:
Article
Affiliation country:
Belgium