Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.
Adv Mater
; 23(48): 5807-11, 2011 Dec 22.
Article
in En
| MEDLINE
| ID: mdl-22105929
ABSTRACT
A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Main subject:
Nanotechnology
Language:
En
Journal:
Adv Mater
Journal subject:
BIOFISICA
/
QUIMICA
Year:
2011
Document type:
Article
Affiliation country:
United States