Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots. | Nanotechnology;23(1): 015303, 2012 Jan 13. | MEDLINE

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Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots.

Chen, Hung-Ming; Kuan, Chieh-Hsiung; Suen, Yuen-Wuu; Luo, Guang-Li; Lai, Yen-Pu; Wang, Fu-Min; Chen, Shih-Ta.

Affiliation

Chen HM; Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.

Nanotechnology ; 23(1): 015303, 2012 Jan 13.

Article in En | MEDLINE | ID: mdl-22155926

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2012 Document type: Article Affiliation country: China Country of publication: United kingdom

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2012 Document type: Article Affiliation country: China Country of publication: United kingdom