InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

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InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B.

Affiliation

Bru-Chevallier C; Université de Lyon, INL CNRS UMR-5270, INSA-Lyon, F-69621 Villeurbanne Cedex, France.

J Nanosci Nanotechnol ; 11(10): 9153-9, 2011 Oct.

Article in En | MEDLINE | ID: mdl-22400316

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Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2011 Document type: Article Affiliation country: France Country of publication: United States

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Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2011 Document type: Article Affiliation country: France Country of publication: United States