InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.
Nanotechnology
; 23(30): 305708, 2012 Aug 03.
Article
in En
| MEDLINE
| ID: mdl-22781961
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanotechnology
Year:
2012
Document type:
Article
Affiliation country:
Sweden
Country of publication:
United kingdom