Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.
J Nanosci Nanotechnol
; 12(7): 5644-7, 2012 Jul.
Article
in En
| MEDLINE
| ID: mdl-22966625
ABSTRACT
In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
J Nanosci Nanotechnol
Year:
2012
Document type:
Article