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A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion.
Qin, Shengjun; Zhang, Jinyu; Fu, Di; Xie, Dan; Wang, Yan; Qian, He; Liu, Litian; Yu, Zhiping.
Affiliation
  • Qin S; Institute of Microelectronics, Tsinghua University, Beijing 100084, China.
Nanoscale ; 4(20): 6658-63, 2012 Oct 21.
Article in En | MEDLINE | ID: mdl-22990172
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Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2012 Document type: Article Affiliation country: China Country of publication: United kingdom
Search on Google
Add to My VHL
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PubMed Links

Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2012 Document type: Article Affiliation country: China Country of publication: United kingdom