Room temperature deposition of silicon nanodot clusters by plasma-enhanced chemical vapor deposition.
J Nanosci Nanotechnol
; 13(10): 7173-6, 2013 Oct.
Article
in En
| MEDLINE
| ID: mdl-24245221
ABSTRACT
The formation of nanometer-scale (ns)-Si dots and clusters on p-GaN layers has been studied by controlling the early stage of growth during plasma-enhanced chemical vapor deposition (PECVD) at room temperature. We found that ns-Si dots and clusters formed on the p-GaN surface, indicating that growth was the Volmer-Weber mode. The deposition parameters such as radio frequency (RF) power and processing time mainly influenced the size of the ns-Si dots (40 nm-160 nm) and the density of the ns-Si dot clusters.
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
J Nanosci Nanotechnol
Year:
2013
Document type:
Article