Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories. | Nanoscale Res Lett;9(1): 12, 2014 Jan 08. | MEDLINE

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Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.

Jana, Debanjan; Maikap, Siddheswar; Prakash, Amit; Chen, Yi-Yan; Chiu, Hsien-Chin; Yang, Jer-Ren.

Affiliation

Maikap S; Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd, Kwei-Shan, Tao-Yuan 333, Taiwan. sidhu@mail.cgu.edu.tw.

Nanoscale Res Lett ; 9(1): 12, 2014 Jan 08.

Article in En | MEDLINE | ID: mdl-24400888

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2014 Document type: Article Country of publication: United States

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2014 Document type: Article Country of publication: United States