Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers. | ACS Nano;8(12): 12836-42, 2014 Dec 23. | MEDLINE

Main content 1 Search 2 Footer 3

+A A -A High contrast

VHL Regional Portal

Information and Knowledge for Health

Subject descriptor lookup Advanced Search EVID@Easy

Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.

Li, Song-Lin; Komatsu, Katsuyoshi; Nakaharai, Shu; Lin, Yen-Fu; Yamamoto, Mahito; Duan, Xiangfeng; Tsukagoshi, Kazuhito.

Affiliation

Li SL; WPI Center for Materials Nanoarchitechtonics and International Center for Young Scientist, National Institute for Materials Science , Tsukuba, Ibaraki 305-0044, Japan.

ACS Nano ; 8(12): 12836-42, 2014 Dec 23.

Article in En | MEDLINE | ID: mdl-25470503

Key words

Schottky barrier; chalcogenide; electrical contact; field-effect transistor; quantum confinement; two-dimensional material

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2014 Document type: Article Affiliation country: Japan Country of publication: United States

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2014 Document type: Article Affiliation country: Japan Country of publication: United States