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All-electric all-semiconductor spin field-effect transistors.
Chuang, Pojen; Ho, Sheng-Chin; Smith, L W; Sfigakis, F; Pepper, M; Chen, Chin-Hung; Fan, Ju-Chun; Griffiths, J P; Farrer, I; Beere, H E; Jones, G A C; Ritchie, D A; Chen, Tse-Ming.
Affiliation
  • Chuang P; Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
  • Ho SC; Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
  • Smith LW; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Sfigakis F; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Pepper M; Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
  • Chen CH; Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
  • Fan JC; Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
  • Griffiths JP; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Farrer I; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Beere HE; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Jones GA; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Ritchie DA; Cavendish Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
  • Chen TM; Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
Nat Nanotechnol ; 10(1): 35-9, 2015 Jan.
Article in En | MEDLINE | ID: mdl-25531088
ABSTRACT
The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Nanotechnol Year: 2015 Document type: Article Affiliation country: Taiwan Publication country: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Nanotechnol Year: 2015 Document type: Article Affiliation country: Taiwan Publication country: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM