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Apparent pH sensitivity of solution-gated graphene transistors.
Lee, Moo Hyung; Kim, Beom Joon; Lee, Keun Hyung; Shin, Ik-Soo; Huh, Wansoo; Cho, Jeong Ho; Kang, Moon Sung.
Affiliation
  • Lee MH; Department of Chemical Engineering, Soongsil University, Seoul 156-743, Korea. mskang@ssu.ac.kr.
Nanoscale ; 7(17): 7540-4, 2015 May 07.
Article in En | MEDLINE | ID: mdl-25850005
Solution-gated graphene transistors were developed recently for use in pH sensor applications. The device operation is understood to rely on the capability of hydronium and hydroxide ions in solution to change the electrical properties of graphene. However, hydronium and hydroxide ions are accompanied by other ionic species in a typical acidic or basic solution and, therefore, the roles of these other ionic species must be also considered to fully understand the pH response of such devices. Using series of pH buffer solutions designed carefully, we verified that the magnitude and even the direction of pH-dependent Dirac voltage (VDirac) shift (the typical pH sensing indicator) depend strongly on the concentration and composition of the buffers used. The results indicate that the interpretation of the apparent pH-dependent VDirac response of a solution-gated graphene transistor must include the contributions of the additional ions in the solution.

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies Language: En Journal: Nanoscale Year: 2015 Document type: Article Country of publication: United kingdom

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies Language: En Journal: Nanoscale Year: 2015 Document type: Article Country of publication: United kingdom