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Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells.
Olshanetsky, E B; Kvon, Z D; Gusev, G M; Levin, A D; Raichev, O E; Mikhailov, N N; Dvoretsky, S A.
Affiliation
  • Olshanetsky EB; Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
  • Kvon ZD; Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
  • Gusev GM; Novosibirsk State University, Novosibirsk 630090, Russia.
  • Levin AD; Instituto de Física da Universidade de São Paulo, 135960-170 São Paulo, São Paulo, Brazil.
  • Raichev OE; Instituto de Física da Universidade de São Paulo, 135960-170 São Paulo, São Paulo, Brazil.
  • Mikhailov NN; Institute of Semiconductor Physics, NAS of Ukraine, Prospekt Nauki 41, 03028 Kyiv, Ukraine.
  • Dvoretsky SA; Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
Phys Rev Lett ; 114(12): 126802, 2015 Mar 27.
Article in En | MEDLINE | ID: mdl-25860765
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Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2015 Document type: Article Affiliation country: RUSSIA Country of publication: United States
Search on Google
Add to My VHL
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PubMed Links

Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2015 Document type: Article Affiliation country: RUSSIA Country of publication: United States