A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysis.
J Nanosci Nanotechnol
; 14(11): 8219-24, 2014 Nov.
Article
in En
| MEDLINE
| ID: mdl-25958504
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
J Nanosci Nanotechnol
Year:
2014
Document type:
Article
Country of publication:
United States