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Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.
Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho.
Affiliation
  • Jang J; ‡Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.
  • Lee T; ‡Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.
ACS Nano ; 9(7): 7515-22, 2015 Jul 28.
Article in En | MEDLINE | ID: mdl-26083550
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2015 Document type: Article Country of publication: United States
Fulltext
Add to My VHL
Print
XML
PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2015 Document type: Article Country of publication: United States