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Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices.
Zhang, Yuan; Zheng, Yonghao; Zhou, Huiqiong; Miao, Mao-Sheng; Wudl, Fred; Nguyen, Thuc-Quyen.
Affiliation
  • Zhang Y; Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
  • Zheng Y; School of Chemistry and Environment, Beihang University, Beijing, 100191, P. R. China.
  • Zhou H; Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
  • Miao MS; Tohoku University WPI-AIMR and CNSI Joint Center, University of California, Santa Barbara, CA, 93106, USA.
  • Wudl F; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Nguyen TQ; Department of Chemistry and Biochemistry, California State University Northridge, Northridge, CA, 91330, USA.
Adv Mater ; 27(45): 7412-9, 2015 Dec 02.
Article in En | MEDLINE | ID: mdl-26485538
ABSTRACT
FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I(off)) in the transistors.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2015 Document type: Article Affiliation country: United States
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2015 Document type: Article Affiliation country: United States