A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells.

Chen, Wenhao; Fang, Runchen; Balaban, Mehmet B; Yu, Weijie; Gonzalez-Velo, Yago; Barnaby, Hugh J; Kozicki, Michael N

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A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells.

Chen, Wenhao; Fang, Runchen; Balaban, Mehmet B; Yu, Weijie; Gonzalez-Velo, Yago; Barnaby, Hugh J; Kozicki, Michael N.

Affiliation

Chen W; School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA.

Nanotechnology ; 27(25): 255202, 2016 Jun 24.

Article in En | MEDLINE | ID: mdl-27171505

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2016 Document type: Article Affiliation country: United States Country of publication: United kingdom