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Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.
Nakaharai, Shu; Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito.
Affiliation
  • Nakaharai S; WPI Center for Materials Nanoarchitechtonics, National Institute for Materials Science , Tsukuba 305-0044, Japan.
  • Yamamoto M; WPI Center for Materials Nanoarchitechtonics, National Institute for Materials Science , Tsukuba 305-0044, Japan.
  • Ueno K; Department of Chemistry, Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan.
  • Tsukagoshi K; WPI Center for Materials Nanoarchitechtonics, National Institute for Materials Science , Tsukuba 305-0044, Japan.
ACS Appl Mater Interfaces ; 8(23): 14732-9, 2016 Jun 15.
Article in En | MEDLINE | ID: mdl-27203118
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2016 Document type: Article Affiliation country: Japan Country of publication: United States
Fulltext
Add to My VHL
Print
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2016 Document type: Article Affiliation country: Japan Country of publication: United States