Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.
J Nanosci Nanotechnol
; 16(6): 6364-7, 2016 Jun.
Article
in En
| MEDLINE
| ID: mdl-27427719
Search on Google
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
J Nanosci Nanotechnol
Year:
2016
Document type:
Article
Country of publication:
United States