Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
Nanoscale Res Lett
; 6(1): 50, 2011 Dec.
Article
in En
| MEDLINE
| ID: mdl-27502672
ABSTRACT
Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanoscale Res Lett
Year:
2011
Document type:
Article
Publication country:
EEUU
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ESTADOS UNIDOS
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ESTADOS UNIDOS DA AMERICA
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EUA
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UNITED STATES
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UNITED STATES OF AMERICA
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US
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USA