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Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
Shi, K; Li, D B; Song, H P; Guo, Y; Wang, J; Xu, X Q; Liu, J M; Yang, A L; Wei, H Y; Zhang, B; Yang, S Y; Liu, X L; Zhu, Q S; Wang, Z G.
Affiliation
  • Shi K; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China. shikai@semi.ac.cn.
  • Li DB; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dong Nan Hu Road, 130033, Changchun, People's Republic of China. lidb@ciomp.ac.cn.
  • Song HP; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Guo Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Wang J; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Xu XQ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Liu JM; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Yang AL; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Wei HY; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Zhang B; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Yang SY; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Liu XL; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China. xlliu@semi.ac.cn.
  • Zhu QS; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
  • Wang ZG; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
Nanoscale Res Lett ; 6(1): 50, 2011 Dec.
Article in En | MEDLINE | ID: mdl-27502672
ABSTRACT
Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2011 Document type: Article Publication country: EEUU / ESTADOS UNIDOS / ESTADOS UNIDOS DA AMERICA / EUA / UNITED STATES / UNITED STATES OF AMERICA / US / USA
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2011 Document type: Article Publication country: EEUU / ESTADOS UNIDOS / ESTADOS UNIDOS DA AMERICA / EUA / UNITED STATES / UNITED STATES OF AMERICA / US / USA