Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.
Adv Mater
; 29(4)2017 Jan.
Article
in En
| MEDLINE
| ID: mdl-27859773
ABSTRACT
A printed vertical field-effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolyte-based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm-2 .
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Adv Mater
Journal subject:
BIOFISICA
/
QUIMICA
Year:
2017
Document type:
Article
Affiliation country:
Germany