Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.
ACS Appl Mater Interfaces
; 9(3): 3149-3155, 2017 Jan 25.
Article
in En
| MEDLINE
| ID: mdl-28072511
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Type of study:
Clinical_trials
Language:
En
Journal:
ACS Appl Mater Interfaces
Journal subject:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Year:
2017
Document type:
Article
Country of publication:
United States