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Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.
Du, Lingjie; Li, Tingxin; Lou, Wenkai; Wu, Xingjun; Liu, Xiaoxue; Han, Zhongdong; Zhang, Chi; Sullivan, Gerard; Ikhlassi, Amal; Chang, Kai; Du, Rui-Rui.
Affiliation
  • Du L; Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA.
  • Li T; Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA.
  • Lou W; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Wu X; SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Liu X; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Han Z; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Zhang C; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Sullivan G; International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
  • Ikhlassi A; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
  • Chang K; Teledyne Scientific and Imaging, Thousand Oaks, California 91603, USA.
  • Du RR; Teledyne Scientific and Imaging, Thousand Oaks, California 91603, USA.
Phys Rev Lett ; 119(5): 056803, 2017 Aug 04.
Article in En | MEDLINE | ID: mdl-28949710
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2017 Document type: Article Affiliation country: United States Country of publication: United States
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2017 Document type: Article Affiliation country: United States Country of publication: United States