Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects.
Adv Sci (Weinh)
; 5(6): 1800096, 2018 Jun.
Article
in En
| MEDLINE
| ID: mdl-29938188
ABSTRACT
Higher memory density and faster computational performance of resistive switching cells require reliable array-accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni-electrode/HfO x /SiO2 asymmetric self-rectifying resistive switching device is fabricated. The interfacial defects in the HfO x /SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation-dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni-rich conductive filament modifies the resistive switching effect. This study has important implications at the array-level performance of high density resistive switching memories.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Adv Sci (Weinh)
Year:
2018
Document type:
Article