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Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1- xBi xI3 Perovskite-Based Memory Device.
Ge, Shuaipeng; Wang, Yuhang; Xiang, Zhongcheng; Cui, Yimin.
Affiliation
  • Ge S; Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics , Beihang University , Beijing 100191 , China.
  • Wang Y; State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Department of Physics , Tsinghua University , Beijing 100084 , China.
  • Xiang Z; Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics , Beihang University , Beijing 100191 , China.
  • Cui Y; Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics , Beihang University , Beijing 100191 , China.
ACS Appl Mater Interfaces ; 10(29): 24620-24626, 2018 Jul 25.
Article in En | MEDLINE | ID: mdl-29969009
ABSTRACT
All-inorganic CsPb1- xBi xI3 perovskite film was successfully fabricated by incorporating Bi3+ in CsPbI3 to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb1- xBi xI3/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb1- xBi xI3/ITO device potential application for multilevel data storage in a nonvolatile memory device.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2018 Document type: Article Affiliation country: China

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2018 Document type: Article Affiliation country: China