Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1- xBi xI3 Perovskite-Based Memory Device.
ACS Appl Mater Interfaces
; 10(29): 24620-24626, 2018 Jul 25.
Article
in En
| MEDLINE
| ID: mdl-29969009
ABSTRACT
All-inorganic CsPb1- xBi xI3 perovskite film was successfully fabricated by incorporating Bi3+ in CsPbI3 to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb1- xBi xI3/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb1- xBi xI3/ITO device potential application for multilevel data storage in a nonvolatile memory device.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
ACS Appl Mater Interfaces
Journal subject:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Year:
2018
Document type:
Article
Affiliation country:
China