Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon.
ACS Appl Mater Interfaces
; 10(30): 25529-25535, 2018 Aug 01.
Article
in En
| MEDLINE
| ID: mdl-29985584
ABSTRACT
Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (ε > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
ACS Appl Mater Interfaces
Journal subject:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Year:
2018
Document type:
Article
Affiliation country:
Spain