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Current-Induced Domain Wall Motion and Tilting in Perpendicularly Magnetized Racetracks.
Li, Dong; Cui, Baoshan; Yun, Jijun; Chen, Minzhang; Guo, Xiaobin; Wu, Kai; Zhang, Xu; Wang, Yupei; Mao, Jian; Zuo, Yalu; Wang, Jianbo; Xi, Li.
Affiliation
  • Li D; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Cui B; Research Institute of Materials Science, Shanxi Normal University, Linfen, 041004, People's Republic of China.
  • Yun J; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Chen M; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Guo X; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Wu K; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Zhang X; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Wang Y; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Mao J; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Zuo Y; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Wang J; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
  • Xi L; Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People's Republic of China.
Nanoscale Res Lett ; 13(1): 238, 2018 Aug 15.
Article in En | MEDLINE | ID: mdl-30112694
ABSTRACT
The influence of C insertion on Dzyaloshinskii-Moriya interaction (DMI) as well as current-induced domain wall (DW) motion (CIDWM) and tilting in Pt/Co/Ta racetracks is investigated via a magneto-optical Kerr microscope. The similar DMI strength for Pt/Co/Ta and Pt/Co/C/Ta samples reveals that DMI mainly comes from the Pt/Co interface. Fast DW velocity around tens of m/s with current density around several MA/cm2 is observed in Pt/Co/Ta. However, it needs double times larger current density to reach the same magnitude in Pt/Co/C/Ta, indicating DW velocity is related to the spin-orbit torque efficiency and pinning potential barrier. Moreover, in CIDWM, DW velocity is around 103 times larger than that in field-induced DW motion (FIDWM) with current-generated effective field keeping the same magnitude as applied magnetic field, revealing that the current-generated Joule heating has an influence on DW motion. Interestingly, current-induced DW tilting phenomenon is observed, while this phenomenon is absent in FIDWM, demonstrating that the current-generated Oersted field may also play an essential role in DW tilting. These findings could provide some designing prospects to drive DW motion in SOT-based racetrack memories.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2018 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2018 Document type: Article