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Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.
Grant, Perry C; Margetis, Joe; Du, Wei; Zhou, Yiyin; Dou, Wei; Abernathy, Grey; Kuchuk, Andrian; Li, Baohua; Tolle, John; Liu, Jifeng; Sun, Greg; Soref, Richard A; Mortazavi, Mansour; Yu, Shui-Qing.
Affiliation
  • Grant PC; Arktonics LLC, 1339 S. Pinnacle Dr, Fayetteville, AR 72701 United States of America. Microelectonics-Photonics Program, University of Arkansas, Fayetteville, AR 72701 United States of America. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 United States of America.
Nanotechnology ; 29(46): 465201, 2018 Nov 16.
Article in En | MEDLINE | ID: mdl-30191884
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Nanotechnology Year: 2018 Document type: Article Country of publication: United kingdom
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Nanotechnology Year: 2018 Document type: Article Country of publication: United kingdom