Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.
Nanotechnology
; 30(6): 064001, 2019 Feb 08.
Article
in En
| MEDLINE
| ID: mdl-30523834
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanotechnology
Year:
2019
Document type:
Article
Affiliation country:
Australia