Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors. | Nanotechnology;30(6): 064001, 2019 Feb 08. | MEDLINE

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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.

Gluschke, J G; Seidl, J; Burke, A M; Lyttleton, R W; Carrad, D J; Ullah, A R; Fahlvik, S; Lehmann, S; Linke, H; Micolich, A P.

Affiliation

Gluschke JG; School of Physics, University of New South Wales, Sydney NSW 2052, Australia.

Nanotechnology ; 30(6): 064001, 2019 Feb 08.

Article in En | MEDLINE | ID: mdl-30523834

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2019 Document type: Article Affiliation country: Australia

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2019 Document type: Article Affiliation country: Australia