Reactive metal-organic interfaces studied with hard x-ray photoelectron spectroscopy: controlled formation of metalloporphyrin interphase layers during metal vapor deposition onto porphyrin films.

ABSTRACT

Interfaces between organic semiconductors and metallic layers are ubiquitous in organic (opto-) electronic devices and can significantly influence their functionality. Here, we studied in situ prepared metal-organic interfaces, which were obtained by vapor deposition of metals (Co, Fe) onto organic semiconductor films (2H-tetraphenylporphyrin), with hard x-ray photoelectron spectroscopy. In these systems, the interphase zones, which are formed by diffusion and reaction of the metal in the organic material, can be clearly distinguished spectroscopically from the unreacted organic bulk, since they comprise the corresponding metalloporphyrins, CoTPP and FeTPP. In order to gain control over the thickness of the interphase layers, we varied process parameters such as sample temperature and metal-atom flux during interface preparation. We found that the temperature of the organic film during metal deposition was the only parameter that significantly influenced the formation of the interphase layers their thicknesses were typically ~0.5 nm for deposition at 90 K, compared to ~1 nm at 300 K, irrespective of metal atom flux and chemical nature of the metal atom (Fe versus Co). Notably, these values are significantly smaller than the thicknesses of other metal/organics interphase regions reported in the literature.