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Novel Molecular Doping Mechanism for n-Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells.
Tu, Bao; Shao, Yangfan; Chen, Wei; Wu, Yinghui; Li, Xin; He, Yanling; Li, Jiaxing; Liu, Fangzhou; Zhang, Zheng; Lin, Yi; Lan, Xiaoqi; Xu, Leiming; Shi, Xingqiang; Ng, Alan Man Ching; Li, Haifeng; Chung, Lung Wa; Djurisic, Aleksandra B; He, Zhubing.
Affiliation
  • Tu B; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Shao Y; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macau SAR, China.
  • Chen W; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macau SAR, China.
  • Wu Y; Department of Physics, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Li X; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • He Y; Department of Physics, The University of Hong Kong, Pokfulam, 999077, Hong Kong SAR, China.
  • Li J; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Liu F; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Zhang Z; Department of Chemistry, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Lin Y; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Lan X; Department of Physics, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Xu L; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Shi X; Department of Physics, Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Ng AMC; Department of Physics, The University of Hong Kong, Pokfulam, 999077, Hong Kong SAR, China.
  • Li H; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Chung LW; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • Djurisic AB; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
  • He Z; Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen, 518055, Guangdong, China.
Adv Mater ; 31(15): e1805944, 2019 Apr.
Article in En | MEDLINE | ID: mdl-30697836
Molecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n-type doping of oxide semiconductors. Herein, successful n-type doping of SnO2 is demonstrated by a simple, air-robust, and cost-effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P+ O- σ-bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi-photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO2 , which enlarges the built-in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO2 /perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2019 Document type: Article Affiliation country: China Country of publication: Germany
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2019 Document type: Article Affiliation country: China Country of publication: Germany