Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes.
ACS Appl Mater Interfaces
; 11(26): 23382-23391, 2019 Jul 03.
Article
in En
| MEDLINE
| ID: mdl-31184467
ABSTRACT
Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III-V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III-V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
ACS Appl Mater Interfaces
Journal subject:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Year:
2019
Document type:
Article