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Optoelectronic resistive random access memory for neuromorphic vision sensors.
Zhou, Feichi; Zhou, Zheng; Chen, Jiewei; Choy, Tsz Hin; Wang, Jingli; Zhang, Ning; Lin, Ziyuan; Yu, Shimeng; Kang, Jinfeng; Wong, H-S Philip; Chai, Yang.
Affiliation
  • Zhou F; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Zhou Z; Institute of Microelectronics, Peking University, Beijing, China.
  • Chen J; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Choy TH; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Wang J; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Zhang N; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Lin Z; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
  • Yu S; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA.
  • Kang J; Institute of Microelectronics, Peking University, Beijing, China.
  • Wong HP; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
  • Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China. ychai@polyu.edu.hk.
Nat Nanotechnol ; 14(8): 776-782, 2019 08.
Article in En | MEDLINE | ID: mdl-31308498

Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Vision, Ocular / Bionics Type of study: Clinical_trials Limits: Humans Language: En Journal: Nat Nanotechnol Year: 2019 Document type: Article Affiliation country: China

Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Vision, Ocular / Bionics Type of study: Clinical_trials Limits: Humans Language: En Journal: Nat Nanotechnol Year: 2019 Document type: Article Affiliation country: China