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Preparation and physical properties of a Cr3Al film with a DO3 structure.
Zhao, W Q; Dai, X F; Zhang, X M; Mo, Z J; Wang, X T; Chen, G F; Cheng, Z X; Liu, G D.
Affiliation
  • Zhao WQ; School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China.
  • Dai XF; School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China.
  • Zhang XM; School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China.
  • Mo ZJ; School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, People's Republic of China.
  • Wang XT; Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
  • Chen GF; School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China.
  • Cheng ZX; Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
  • Liu GD; School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China.
IUCrJ ; 6(Pt 4): 552-557, 2019 Jul 01.
Article in En | MEDLINE | ID: mdl-31316800
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: IUCrJ Year: 2019 Document type: Article Country of publication: United kingdom
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: IUCrJ Year: 2019 Document type: Article Country of publication: United kingdom