Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing.
Sci Rep
; 9(1): 10590, 2019 Jul 22.
Article
in En
| MEDLINE
| ID: mdl-31332250
ABSTRACT
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Sci Rep
Year:
2019
Document type:
Article