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Electric-Field-Driven Nanosecond Ferroelastic-Domain Switching Dynamics in Epitaxial Pb(Zr,Ti)O_{3} Film.
Lee, Hyeon Jun; Shimizu, Takao; Funakubo, Hiroshi; Imai, Yasuhiko; Sakata, Osami; Hwang, Seung Hyun; Kim, Tae Yeon; Yoon, Changjae; Dai, Cheng; Chen, Long Q; Lee, Su Yong; Jo, Ji Young.
Affiliation
  • Lee HJ; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea.
  • Shimizu T; Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan.
  • Funakubo H; Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan.
  • Imai Y; SPring-8, Japanese Synchrotron Radiation Research Institute, Hyogo 679-5198, Japan.
  • Sakata O; Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Hyogo 679-5148, Japan.
  • Hwang SH; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea.
  • Kim TY; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea.
  • Yoon C; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea.
  • Dai C; Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania 16802, USA.
  • Chen LQ; Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania 16802, USA.
  • Lee SY; Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37676, South Korea.
  • Jo JY; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea.
Phys Rev Lett ; 123(21): 217601, 2019 Nov 22.
Article in En | MEDLINE | ID: mdl-31809179
Epitaxial oxide ferroelectric films exhibit emerging phenomena arising from complex domain configurations even at pseudoequilibrium, including the creation of domain states unfavored in nature and abrupt piezoelectric coefficients around morphotropic phase boundaries. The nanometer-sized domain configurations and their domain switching dynamics under external stimuli are directly linked to the ultrafast manipulation of ferroelectric thin films; however, complex domain switching dynamics under homogeneous electric fields has not been fully explored, especially at the nanosecond timescale. This Letter reports the nanosecond dynamics of ferroelastic-domain switching from the 90° to 180° direction using time-resolved x-ray microdiffraction under homogeneous electric fields onto an epitaxial Pb(Zr_{0.35},Ti_{0.65})O_{3} film capacitor. It is found that the application of electric fields induces spatially heterogeneous domain switching processes via intermediate domain structures with rotated polarization vectors. In addition, the domain switching time is shown to be inversely proportional to the magnitude of the applied electric field, and electric fields higher than 480 kV/cm are found to complete the ferroelastic switching within nanoseconds.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2019 Document type: Article Affiliation country: Korea (South) Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2019 Document type: Article Affiliation country: Korea (South) Country of publication: United States