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A self-powered photodetector based on two-dimensional boron nanosheets.
Ma, Dingtao; Wang, Rui; Zhao, Jinlai; Chen, Qianyuan; Wu, Leiming; Li, Delong; Su, Liumei; Jiang, Xiantao; Luo, Zhengqian; Ge, Yanqi; Li, Jianqing; Zhang, Yupeng; Zhang, Han.
Affiliation
  • Ma D; Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China.
  • Wang R; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn and Department of Electronic Eng
  • Zhao J; Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China and Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,
  • Chen Q; School of Physics and Technology, and MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Wuhan 430072, China.
  • Wu L; Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China.
  • Li D; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn.
  • Su L; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn.
  • Jiang X; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn.
  • Luo Z; Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China.
  • Ge Y; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn.
  • Li J; Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China.
  • Zhang Y; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn.
  • Zhang H; Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. ypzhang@szu.edu.cn hzhang@szu.edu.cn.
Nanoscale ; 12(9): 5313-5323, 2020 Mar 05.
Article in En | MEDLINE | ID: mdl-32080700
ABSTRACT
Owing to their intriguing characteristics, the ongoing pursuit of emerging mono-elemental two-dimensional (2D) nanosheets beyond graphene is an exciting research area for next-generation applications. Herein, we demonstrate that highly crystalline 2D boron (B) nanosheets can be efficiently synthesized by employing a modified liquid phase exfoliation method. Moreover, carrier dynamics has been systematically investigated by using femtosecond time-resolved transient absorption spectroscopy, demonstrating an ultrafast recovery speed during carrier transfer. Based on these results, the optoelectronic performance of the as-synthesized 2D B nanosheets has been investigated by applying them in photoelectrochemical (PEC)-type and field effect transistor (FET)-type photodetectors. The experimental results revealed that the as-fabricated PEC device not only exhibited a favourable self-powered capability, but also a high photoresponsivity of 2.9-91.7 µA W-1 in the UV region. Besides, the FET device also exhibited a tunable photoresponsivity in the range of 174-281.3 µA W-1 under the irradiation of excited light at 405 nm. We strongly believe that the current work shall pave the path for successful utilization of 2D B nanosheets in electronic and optoelectronic devices. Moreover, the proposed method can be utilized to explore other mono-elemental 2D nanomaterials.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2020 Document type: Article
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2020 Document type: Article