Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature µ-Photoluminescence and µ-Raman Analysis.
Materials (Basel)
; 13(8)2020 Apr 13.
Article
in En
| MEDLINE
| ID: mdl-32295087
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Type of study:
Prognostic_studies
Language:
En
Journal:
Materials (Basel)
Year:
2020
Document type:
Article
Affiliation country:
Italy