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Micron Thick Colloidal Quantum Dot Solids.
Fan, James Z; Vafaie, Maral; Bertens, Koen; Sytnyk, Mykhailo; Pina, Joao M; Sagar, Laxmi Kishore; Ouellette, Olivier; Proppe, Andrew H; Rasouli, Armin Sedighian; Gao, Yajun; Baek, Se-Woong; Chen, Bin; Laquai, Frédéric; Hoogland, Sjoerd; Arquer, F Pelayo García de; Heiss, Wolfgang; Sargent, Edward H.
Affiliation
  • Fan JZ; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Vafaie M; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Bertens K; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Sytnyk M; Materials for Electronics and Energy Technology (i-MEET), Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Energy Campus Nürnberg, Fürtherstraße 250, Nürnberg 90429, Germany.
  • Pina JM; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Sagar LK; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Ouellette O; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Proppe AH; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Rasouli AS; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Gao Y; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), Thuwal 23955-6900, Saudi Arabia.
  • Baek SW; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Chen B; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Laquai F; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), Thuwal 23955-6900, Saudi Arabia.
  • Hoogland S; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Arquer FPG; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
  • Heiss W; Materials for Electronics and Energy Technology (i-MEET), Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Energy Campus Nürnberg, Fürtherstraße 250, Nürnberg 90429, Germany.
  • Sargent EH; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
Nano Lett ; 20(7): 5284-5291, 2020 Jul 08.
Article in En | MEDLINE | ID: mdl-32543860
Shortwave infrared colloidal quantum dots (SWIR-CQDs) are semiconductors capable of harvesting across the AM1.5G solar spectrum. Today's SWIR-CQD solar cells rely on spin-coating; however, these films exhibit cracking once thickness exceeds ∼500 nm. We posited that a blade-coating strategy could enable thick QD films. We developed a ligand exchange with an additional resolvation step that enabled the dispersion of SWIR-CQDs. We then engineered a quaternary ink that combined high-viscosity solvents with short QD stabilizing ligands. This ink, blade-coated over a mild heating bed, formed micron-thick SWIR-CQD films. These SWIR-CQD solar cells achieved short-circuit current densities (Jsc) that reach 39 mA cm-2, corresponding to the harvest of 60% of total photons incident under AM1.5G illumination. External quantum efficiency measurements reveal both the first exciton peak and the closest Fabry-Perot resonance peak reaching approximately 80%-this is the highest unbiased EQE reported beyond 1400 nm in a solution-processed semiconductor.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2020 Document type: Article Affiliation country: Canada Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2020 Document type: Article Affiliation country: Canada Country of publication: United States