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Pressure-Dependent Intermediate Magnetic Phase in Thin Fe3GeTe2 Flakes.
Wang, Heshen; Xu, Runzhang; Liu, Cai; Wang, Le; Zhang, Zhan; Su, Huimin; Wang, Shanmin; Zhao, Yusheng; Liu, Zhaojun; Yu, Dapeng; Mei, Jia-Wei; Zou, Xiaolong; Dai, Jun-Feng.
Affiliation
  • Wang H; School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, P. R. China.
  • Xu R; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Liu C; Shenzhen Geim Graphene Center and Low-Dimensional Materials and Devices Laboratory, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, P. R. China.
  • Wang L; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Zhang Z; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Su H; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Wang S; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Zhao Y; Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Liu Z; Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Yu D; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Mei JW; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Zou X; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
  • Dai JF; Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
J Phys Chem Lett ; 11(17): 7313-7319, 2020 Sep 03.
Article in En | MEDLINE | ID: mdl-32787290
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Phys Chem Lett Year: 2020 Document type: Article
Fulltext
Add to My VHL
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Phys Chem Lett Year: 2020 Document type: Article