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Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition.
Choi, Se-Na; Moon, Seung-Eon; Yoon, Sung-Min.
Affiliation
  • Choi SN; Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Republic of Korea.
  • Moon SE; Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea.
  • Yoon SM; Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Republic of Korea.
Nanotechnology ; 32(8): 085709, 2021 Feb 19.
Article in En | MEDLINE | ID: mdl-33176285
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2021 Document type: Article
Fulltext
Add to My VHL
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2021 Document type: Article