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Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2.
Liu, Liwei; Yang, Han; Huang, Yuting; Song, Xuan; Zhang, Quanzhen; Huang, Zeping; Hou, Yanhui; Chen, Yaoyao; Xu, Ziqiang; Zhang, Teng; Wu, Xu; Sun, Jiatao; Huang, Yuan; Zheng, Fawei; Li, Xianbin; Yao, Yugui; Gao, Hong-Jun; Wang, Yeliang.
Affiliation
  • Liu L; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China. liwei.liu@bit.edu.cn.
  • Yang H; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Huang Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China.
  • Song X; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Zhang Q; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Huang Z; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Hou Y; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Chen Y; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Xu Z; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Zhang T; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Wu X; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Sun J; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Huang Y; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
  • Zheng F; Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Li X; Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) and School of Physics, Beijing Institute of Technology, Beijing, China.
  • Yao Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China.
  • Gao HJ; Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) and School of Physics, Beijing Institute of Technology, Beijing, China.
  • Wang Y; Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Nat Commun ; 12(1): 1978, 2021 Mar 30.
Article in En | MEDLINE | ID: mdl-33785747
ABSTRACT
Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a √3 × âˆš3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies / Prognostic_studies Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2021 Document type: Article Affiliation country: China
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies / Prognostic_studies Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2021 Document type: Article Affiliation country: China