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Giant gauge factor of Van der Waals material based strain sensors.
Yan, Wenjie; Fuh, Huei-Ru; Lv, Yanhui; Chen, Ke-Qiu; Tsai, Tsung-Yin; Wu, Yuh-Renn; Shieh, Tung-Ho; Hung, Kuan-Ming; Li, Juncheng; Zhang, Duan; Ó Coileáin, Cormac; Arora, Sunil K; Wang, Zhi; Jiang, Zhaotan; Chang, Ching-Ray; Wu, Han-Chun.
Affiliation
  • Yan W; School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
  • Fuh HR; Department of Physics, National Taiwan University, Taipei, Taiwan.
  • Lv Y; Department of Chemical Engineering & Materials Science, Yuan Ze University, Taoyuan City, Taiwan.
  • Chen KQ; School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
  • Tsai TY; Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, P. R. China.
  • Wu YR; Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
  • Shieh TH; Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
  • Hung KM; Department of Intelligent Robotics Engineering, Kun-Shan University, Tainan, Taiwan.
  • Li J; Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan. kmhung@nkust.edu.tw.
  • Zhang D; School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
  • Ó Coileáin C; Elementary Educational College, Beijing key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing, P. R. China.
  • Arora SK; Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin, Dublin, Ireland.
  • Wang Z; Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh, India.
  • Jiang Z; School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
  • Chang CR; School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
  • Wu HC; Department of Physics, National Taiwan University, Taipei, Taiwan.
Nat Commun ; 12(1): 2018, 2021 Apr 01.
Article in En | MEDLINE | ID: mdl-33795697
There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2021 Document type: Article Country of publication: United kingdom

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2021 Document type: Article Country of publication: United kingdom