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Electron Doping Effect in the Resistive Switching Properties of Al/Gd1-xCaxMnO3/Au Memristor Devices.
Lähteenlahti, Ville; Schulman, Alejandro; Beiranvand, Azar; Huhtinen, Hannu; Paturi, Petriina.
Affiliation
  • Lähteenlahti V; Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.
  • Schulman A; Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.
  • Beiranvand A; Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.
  • Huhtinen H; Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.
  • Paturi P; Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.
ACS Appl Mater Interfaces ; 13(15): 18365-18371, 2021 Apr 21.
Article in En | MEDLINE | ID: mdl-33832220
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2021 Document type: Article Affiliation country: Finland Country of publication: United States
Fulltext
Add to My VHL
Print
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2021 Document type: Article Affiliation country: Finland Country of publication: United States