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Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films.
Lee, Hyangsook; Choe, Duk-Hyun; Jo, Sanghyun; Kim, Jung-Hwa; Lee, Hyun Hwi; Shin, Hyun-Joon; Park, Yeehyun; Kang, Seunghun; Cho, Yeonchoo; Park, Seontae; Moon, Taehwan; Eom, Deokjoon; Leem, Mirine; Kim, Yunseok; Heo, Jinseong; Lee, Eunha; Kim, Hyoungsub.
Affiliation
  • Lee H; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Choe DH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Jo S; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Kim JH; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Lee HH; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Shin HJ; Beamline Division, Pohang Accelerator Laboratory (PAL), Pohang 37673, Republic of Korea.
  • Park Y; Beamline Division, Pohang Accelerator Laboratory (PAL), Pohang 37673, Republic of Korea.
  • Kang S; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Cho Y; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Park S; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Moon T; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Eom D; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Leem M; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Kim Y; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Heo J; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Lee E; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
  • Kim H; Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
ACS Appl Mater Interfaces ; 13(30): 36499-36506, 2021 Aug 04.
Article in En | MEDLINE | ID: mdl-34310129
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2021 Document type: Article
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2021 Document type: Article