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An Operation Guide of Si-MOS Quantum Dots for Spin Qubits.
Hu, Rui-Zi; Ma, Rong-Long; Ni, Ming; Zhang, Xin; Zhou, Yuan; Wang, Ke; Luo, Gang; Cao, Gang; Kong, Zhen-Zhen; Wang, Gui-Lei; Li, Hai-Ou; Guo, Guo-Ping.
Affiliation
  • Hu RZ; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
  • Ma RL; CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
  • Ni M; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
  • Zhang X; CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
  • Zhou Y; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
  • Wang K; CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
  • Luo G; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
  • Cao G; CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
  • Kong ZZ; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
  • Wang GL; CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
  • Li HO; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
  • Guo GP; CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
Nanomaterials (Basel) ; 11(10)2021 Sep 24.
Article in En | MEDLINE | ID: mdl-34684927
In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. In this paper, we introduce how to realize a single spin qubit from Si-MOS quantum dots. First, we introduce the structure of a typical Si-MOS quantum dot and the experimental setup. Then, we show the basic properties of the quantum dot, including charge stability diagram, orbital state, valley state, lever arm, electron temperature, tunneling rate and spin lifetime. After that, we introduce the two most commonly used methods for spin-to-charge conversion, i.e., Elzerman readout and Pauli spin blockade readout. Finally, we discuss the details of how to find the resonance frequency of spin qubits and show the result of coherent manipulation, i.e., Rabi oscillation. The above processes constitute an operation guide for helping the followers enter the field of spin qubits in Si-MOS quantum dots.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: China Country of publication: Switzerland

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: China Country of publication: Switzerland