Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories. | Adv Mater;34(3): e2105022, 2022 Jan. | MEDLINE

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Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories.

Chen, Shaochuan; Valov, Ilia.

Affiliation

Chen S; Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074, Aachen, Germany.
Valov I; Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074, Aachen, Germany.

Adv Mater ; 34(3): e2105022, 2022 Jan.

Article in En | MEDLINE | ID: mdl-34695257

Key words

capping layers; electrode materials; redox reactions; resistive switching; thicknesses

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Affiliation country: Germany

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Affiliation country: Germany